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Si7230DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.012 at V GS = 10 V
0.016 at V GS = 4.5 V
I D (A)
14
12
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? PWM Optimized
? 100 % R g Tested
PowerPAK 1212-8
APPLICATIONS
? DC/DC Converters
- Secondary Synchronous Rectifier
3.30 mm
1
S
S
3.30 mm
- High-Side MOSFET in Synchronous Buck
2
3
S
G
D
4
D
8
D
7
6
D
D
G
5
Bottom View
S
Ordering Information: Si7230DN-T1-E3 (Lead (Pb)-free)
Si7230DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
14
11
40
9
7.5
A
Continuous Source Current (Diode
Single Pulse Avalanche Current
Avalanche Energy
Conduction) a
L = 0.1 mH
I S
I AS
E AS
3.2
14
9.8
1.3
mJ
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.7
2.3
- 55 to 150
260
1.5
1.0
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
28
66
2.0
34
81
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74396
S-83052-Rev. B, 29-Dec-08
www.vishay.com
1
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